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| 6N90C Description |
| FQA6N90C
FQA6N90C 900V N-Channel MOSFET
QFET
FQA6N90C
900V N-Channel MOSFET
Features
6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 11pF) Fast switching 100% avalanche tested Improved dv, dt capability
September 2006 ®
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resis
Fairchild Semiconductor |
| Related Part Number |
6N90 | 6N90Z |
| DataSheet.es | 2020 | Contacto |