2N5771 PDF File ( Datasheet )

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous @Tota^ Device Dissipation Ta = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Lead Temperature Symbol vCEO vCBO VEBO 'C PD Pd TJ- Tstg Value 15 15 4.5 50 0.625 1.0 -55 to +150 Unit Vdc Vdc Vdc mA Watts mW, °C Watt mW, °C °C TL 260 °c 2N5771 CASE 29-02, STYLE 1 TO-92 (TO-226AA) SWITCHI

2N5771 , MMBT5771 Discrete POWER & Signal Technologies 2N5771 MMBT5771 C E C BE TO-92 SOT-23 Mark: 3R B PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter V