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2SD1684 PDF File ( Datasheet )

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2SD1684T
Bipolar (BJT) Single Transistor, NPN, 100 V, 1.5 A, 10 W, TO-126, Through Hole

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2SD1684 Description
Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD1684 DESCRIPTION ··Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -0.5A ·Wide Area of Safe Operation ·Complement to Type 2SB1144 APPLICATIONS ·Designed for 100V, 1.5A Switching Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6V IC Collector Current-Conti
Inchange Semiconductor
Inchange Semiconductor
PNP/NPN Epitaxial Planar Silicon Transistors

Ordering number:2041A PNP, NPN Epitaxial Planar Silicon Transistors 2SB1144, 2SD1684 100V, 1.5A Switching Applications Features · Adoption of FBET and MBIT processes. · High breakdown voltage. · Low saturation voltage. · Plastic-covered heat sink facilitating high-density mounting. Package Dimensions unit:mm 2042B [2SB1144, 2SD1684] ( ) : 2SB1144 1 : Emitter 2 : Collector 3 : Base Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-E
Sanyo Semicon Device
Sanyo Semicon Device



Related Part Number

2SD1056  |  2SD1760  

2SD180  |  2SD758  

2SD1812  |  2SD1781  



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