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2SK856 PDF File ( Datasheet )
Toshiba
2SK856
Power Field-Effect Transistor, 45A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| SHENGYU ELECTRONICS | 8,491 | 0.3063 | Visit Site | ||
| ComSIT Distribution GmbH | 170 | Visit Site | |||
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| 2SK856 Description |
| N-Channel MOSFET Transistor
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK856
DESCRIPTION ·Drain Current ID=45A@ TC=25℃ ·Drain Source Voltage-
: VDSS=60V(Min)
APPLICATIONS ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0)
60 V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=25℃ 45 A
Total Dissipation@TC=25℃
1
 Inchange Semiconductor |
N-CHANNEL MOSFET
 Toshiba Semiconductor |
| Related Part Number |
2SK764A | 2SK566 2SK1099 | 2SK1630 2SK723 | 2SK1610 |
| DataSheet.es | 2020 | Contacto |