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2SK792 PDF File ( Datasheet )
Toshiba
2SK792
Power Field-Effect Transistor, 3A I(D), 900V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Best Source | 29,257 | 28.1348 | Visit Site | ||
| SHENGYU ELECTRONICS | 11,946 | 0.5253 | Visit Site | ||
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| 2SK792 Description |
| N-Channel MOSFET Transistor
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK792
DESCRIPTION ·Drain Current ID=3A@ TC=25℃ ·Drain Source Voltage-
: VDSS=900V(Min) ·Fast Switching Speed
APPLICATIONS ·Designed for high voltage, high speed power switching
applications such as switching regulators, converters, solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0)
900 V
Gate-Source Voltage
 Inchange Semiconductor |
Transistor
 Toshiba Semiconductor |
| Related Part Number |
2SK1632 | 2SK3872-01S 2SK1224 | 2SK725 2SK1612 | 2SK849 |
| DataSheet.es | 2020 | Contacto |