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2SK788 PDF File ( Datasheet )
Toshiba
2SK788
Power Field-Effect Transistor, 13A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| SHENGYU ELECTRONICS | 13,857 | 0.6125 | Visit Site | ||
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| 2SK788 Description |
| N-Channel MOSFET Transistor
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK788
DESCRIPTION ·Drain Current ID=13A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Fast Switching Speed
APPLICATIONS ·Designed for high voltage, high speed power switching
applications such as switching regulators, converters, solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0)
500 V
Gate-Source Voltag
 Inchange Semiconductor |
FIELD EFFECT TRANSISTOR
 Toshiba Semiconductor |
| Related Part Number |
2SK1081 | 2SK857 2SK1039 | 2SK644 2SK1010 | 2SK2111-HF |
| DataSheet.es | 2020 | Contacto |