2SK632 PDF File ( Datasheet )

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FEATURES ·Drain Current ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) isc Product Specification 2SK632 DESCRIPTION ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous PD Total Dissipation @TC=25