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2SK4115 PDF File ( Datasheet )

Toshiba
2SK4115
Switching Regulator Applications / Trans MOSFET N-CH Si 900V 7A 3-Pin(3+Tab) TO-3PN

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2SK4115 Description
Switching Regulator Applications

2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSⅣ) 2SK4115 Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 1.6 Ω (typ.) High forward transfer admittance: Yfs = 5.0 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) 3.3max. 2.0 9.0 20.0±0.3 2.0 Ф3.2±0.2 1.0 4.5 Unit: mm 15.9max. Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-
Toshiba Semiconductor
Toshiba Semiconductor



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