2SK4108 PDF File ( Datasheet )

2SK4108 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) 2SK4108 Switching Regulator Applications - Low drain source ON resistance - High forward transfer admittance - Low leakage current - Enhancement mode Unit: mm : RDS (ON) = 0. 21Ω (typ.) : |Yfs| = 14 S (typ.) : IDSS = 100 μA (max) (VDS = 500 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain source voltage Drain gate voltage (RGS = 20 kΩ) Gate source voltag