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| 2SK3799 Description |
| Silicon N Channel MOS Type Switching Regulator Applications
2SK3799
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV)
2SK3799
Unit: mm : RDS (ON) = 1.0 Ω (typ.) : |Yfs| = 6.0 S (typ.)
Switching Regulator Applications
- Low drain-source ON resistance - High forward transfer admittance
- Low leakage current : IDSS = 100μA (max) (VDS = 720 V) - Enhancement model : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source volta
Toshiba Semiconductor |
| Related Part Number |
2SK765 | 2SK1099 2SK1630 | 2SK3872-01L 2SK1610 | 2SK845 |
| DataSheet.es | 2020 | Contacto |