|
2SK3767 PDF File ( Datasheet )
Toshiba
2SK3767
TRANSISTOR 2 A, 600 V, 4.5 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10U1B, SC-67, 3 PIN, FET General Purpose...
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Component Stockers USA | 3,433 | 1.19 | Visit Site | ||
| Win Source | 24,000 | Visit Site | |||
| SHENGYU ELECTRONICS | 16,309 | 0.1531 | Visit Site | ||
| ODG (Origin Data Global) | 40,296 | Visit Site | |||
Powered by Octopart | |||||
| 2SK3767 Description |
| Silicon N Channel MOS Type Switching Regulator Applications
2SK3767
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3767
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 3.3Ω (typ.) High forward transfer admittance: |Yfs| = 1.6S (typ.) Low leakage current: IDSS = 100μA (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse
 Toshiba Semiconductor |
| Related Part Number |
2SK794 | 2SK622 2SK1099 | 2SK762A 2SK564 | 2SK311 |
| DataSheet.es | 2020 | Contacto |