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2SK376 PDF File ( Datasheet )
Toshiba
2SK3767
TRANSISTOR 2 A, 600 V, 4.5 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10U1B, SC-67, 3 PIN, FET General Purpose...
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Component Stockers USA | 3,433 | 1.19 | Visit Site | ||
| Win Source | 24,000 | Visit Site | |||
| SHENGYU ELECTRONICS | 16,309 | 0.1531 | Visit Site | ||
| ODG (Origin Data Global) | 40,296 | Visit Site | |||
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| 2SK376 Description |
N-Channel Silicon FET
 Sanyo |
| TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS6)
2SK3760
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS‡Y )
2SK3760
unit F
Switching Regulator Applications
3.84 } 0 .2
3.84 }0.2
10.5 10.5max max
4.7max 4.7 max
1.3 6.6 max
6.6 max.
1.3
Low drain-source ON resistance: R DS (ON) = 1.7 ¶ (typ.) High forward transfer admittance: |Yfs| = 2.5S (typ.) Low leakage current: IDSS = 100 A (V DS = 600 V) Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)
13.4 13.4min min.
3.9 max
3.9 max.
Maximum Rat
 Toshiba Semiconductor |
| Related Part Number |
2SK1936 | 2SK534 2SK3599 | 2SK1350 2SK43 | 2SK402 |
| DataSheet.es | 2020 | Contacto |