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2SK3593-01 PDF File ( Datasheet )

Fuji
2SK3593-01
Power Field-Effect Transistor, 40A I(D), 150V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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2SK3593-01 Description
N-CHANNEL SILICON POWER MOSFET

2SK3593-01 FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Unit V 150 V *5 120 A Continuous drain current ±57 A ±5.4 ** A Pulsed drain current ID(puls] ±2

Fuji Electric
Fuji Electric




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