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2SK350 PDF File ( Datasheet )



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2SK3503(0)-T1-A
N-channel Mos Field Effect Transistor For High Speed Switching
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Rochester Electronics30,0000.1189Visit Site
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Worldway Electronics17,0200.10460.1026Visit Site
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2SK350 Description
N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK350 DESCRIPTION ·Drain Current ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Fast Switching Speed APPLICATIONS ·High speed power Switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 10 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max. Operating Junction Tem

Inchange Semiconductor
Inchange Semiconductor
Silicon N-Channel MOSFET

Hitachi
Hitachi




Related Part Number

2SK2016  |  2SK3990-01L  

2SK1985-01M  |  2SK3424  

2SK1944  |  2SK258  



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