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2SK3430 PDF File ( Datasheet )
Renesas
2SK3430-Z-E2-AZ
Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Rochester Electronics | 2,000 | Visit Site | |||
| Verical | 2,000 | Visit Site | |||
| Worldway Electronics | 12,415 | Visit Site | |||
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| 2SK3430 Description |
| SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3430
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER 2SK3430 2SK3430-S 2SK3430-Z PACKAGE TO-220AB TO-262 TO-220SMD
DESCRIPTION
The 2SK3430 is N-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
Super low on-state resistance: 5 5 RDS(on)1 = 7.3 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 15 mΩ MAX. (VGS = 4 V, ID = 40 A) Built-in gate protection diode
(TO-
 NEC |
| SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3430
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER 2SK3430 2SK3430-S 2SK3430-Z PACKAGE TO-220AB TO-262 TO-220SMD
DESCRIPTION
The 2SK3430 is N-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
Super low on-state resistance: 5 5 RDS(on)1 = 7.3 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 15 mΩ MAX. (VGS = 4 V, ID = 40 A) Built-in gate protection diode
(TO-
NEC |
| Related Part Number |
2SK1073 | 2SK1676 2SK1638 | 2SK2077 2SK859 | 2SK3835 |
| DataSheet.es | 2020 | Contacto |