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2SK3386-Z PDF File ( Datasheet )

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2SK3386-Z-E1-AZ
Power Field-Effect Transistor, 34A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

PDF Datasheet
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2SK3386-Z Description
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3386 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3386 2SK3386-Z PACKAGE TO-251 TO-252 DESCRIPTION The 2SK3386 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES Low On-state Resistance 5 5 RDS(on)1 = 21 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 36 mΩ MAX. (VGS = 4.0 V, ID = 17 A) Low Ciss : Ciss = 2100 pF TYP. Built-in Gate Protection Diode TO-251, TO-2
NEC
NEC



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