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2SK3337-01 PDF File ( Datasheet )

Fuji
2SK3337-01
Power Field-Effect Transistor, 7A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...
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2SK3337-01 Description
N-CHANNEL SILICON POWER MOS-FET

2SK3337-01 N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Ma

Fuji Electric
Fuji Electric




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