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2SK3310 PDF File ( Datasheet )

Toshiba
2SK3310
Power Field-Effect Transistor, 10A I(D), 450V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

PDF Datasheet
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2SK3310 Description
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

2SK3310 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3310 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) High forward transfer admittance: |Yfs| = 4.3 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 450 V) Enhancement model: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC P
Toshiba Semiconductor
Toshiba Semiconductor



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