2SK3287 PDF File ( Datasheet )

2SK3287 Silicon N Channel MOS FET High Speed Switching ADE-208-742 C (Z) 4th.Edition. June 1999 Features Low on-resistance R DS = 1.26 Ω typ. (VGS = 10 V , ID = 150 mA) R DS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA) 4 V gate drive device. Small package (MPAK) Outline MPAK 3 1 D 2 G 1. Source 2. Gate 3. Drain S 2SK3287 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel