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| 2SK3156 Description |
| Silicon N Channel MOS FET High Speed Power Switching
2SK3156
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-683A (Z) 2nd. Edition February 1999 Features
Low on-resistance R DS = 50 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source
Outline
TO 220AB
D
G
1 2 S 3
1. Gate 2. Drain(Flange) 3. Source
2SK3156
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche ene
Hitachi Semiconductor |
| Related Part Number |
2SK529 | 2SK1476 2SK4174 | 2SK197 2SK1938 | 2SK2039 |
| DataSheet.es | 2020 | Contacto |