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2SK3156 PDF File ( Datasheet )

VBsemi
2SK3156-VB
N¡ªchannel, 150V, 45A, Rds(on), 45M¦¸@10V, 54M¦¸@4.5V, 20VGS(¡ÀV), 2~4VTH(V) , TO220
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2SK3156 Description
Silicon N Channel MOS FET High Speed Power Switching

2SK3156 Silicon N Channel MOS FET High Speed Power Switching ADE-208-683A (Z) 2nd. Edition February 1999 Features Low on-resistance R DS = 50 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO 220AB D G 1 2 S 3 1. Gate 2. Drain(Flange) 3. Source 2SK3156 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche ene

Hitachi Semiconductor
Hitachi Semiconductor




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