2SK3109-S PDF File ( Datasheet )

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3109 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3109 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC, DC converter. ORDERING INFORMATION PART NUMBER 2SK3109 2SK3109-S 2SK3109-ZJ PACKAGE TO-220AB TO-262 TO-263 FEATURES Gate voltage rating ±30 V Low on-state resistance RDS(on) = 0.4 Ω MAX. (VGS = 10 V, ID = 5