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| 2SK3069 Description |
| Silicon N Channel MOS FET High Speed Power Switching
2SK3069
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-694I (Z) 10th. Edition February 1999 Features
Low on-resistance R DS(on) = 6 mΩ typ. Low drive current 4 V gate drive device can be driven from 5 V source
Outline
TO 220AB
D
G
1 2 S 3
1. Gate 2. Drain(Flange) 3. Source
2SK3069
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche en
Hitachi Semiconductor |
| Related Part Number |
2SK644 | 2SK1009 2SK1680 | 2SK1550 2SK610 | 2SK2080-01R |
| DataSheet.es | 2020 | Contacto |