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2SK3017 PDF File ( Datasheet )
Toshiba
2SK3017(F)
Power Field-Effect Transistor, 8.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
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| 2SK3017 Description |
| Silicon N Channel MOS Type Field Effect Transistor
2SK3017
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII)
2SK3017
DC DC Converter, Relay Drive and Motor Drive Applications
Unit: mm
- Low drain source ON resistance : RDS (ON) = 1.05 Ω (typ.)
- High forward transfer admittance : |Yfs| = 7.0 S (typ.)
- Low leakage current
: IDSS = 100 μA (max) (VDS = 720 V)
- Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain source voltag
 Toshiba Semiconductor |
| Related Part Number |
2SK415 | 2SK955 2SK1821 | 2SK3876-01R 2SK530 | 2SK260 |
| DataSheet.es | 2020 | Contacto |