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2SK30 PDF File ( Datasheet )



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ROHM
2SK3018T106
Single N-Channel 200 mW 30 V 13 Ohm Surface Mount MosFet - UMT-3

PDF Datasheet
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2SK30 Description
N-Channel MOSFET ( -50V, 10mA, 2SK30ATM)

1. High breakdown voltage: VGDS = −50 V 2. High input impedance: IGSS = −1 nA (max) (VGS = −30 V) 3. Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit

Toshiba
Toshiba
Silicon N-Channel Power F-MOS FET

1. Avalanche energy capacity guaranteed 2. High-speed switching 3. Low ON-resistance 4. No secondary breakdown
Panasonic Semiconductor
Panasonic Semiconductor



Related Part Number

2SK944  |  2SK3426  

2SK1944  |  2SK258  

2SK400  |  2SK953  



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