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2SK2898-01 PDF File ( Datasheet )

Fuji
2SK2898-01
Power Field-Effect Transistor, 100A I(D), 60V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor...
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2SK2898-01 Description
N-channel MOS-FET

2SK2898-01 FAP-IIIB Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 60V 0,0065Ω ±100A 150W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max

Fuji Electric
Fuji Electric




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