2SK2897-01 PDF File ( Datasheet )

VBsemi

2SK2897-01MR-VB

N¡ªchannel, 60V, 70A, Rds(on), 10M¦¸@10V, 12M¦¸@4.5V, 20VGS(¡ÀV), 1.5VTH(V) , TO220F

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2SK2897-01 Description

N-channel MOS-FET

2SK2897-01 FAP-IIIB Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 60V 0,02Ω ±45A 40W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max.

Fuji Electric

N-channel MOS-FET

2SK2897-01MR FAP-IIIB Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 60V 0,02Ω ±45A 40W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max

Fuji Electric

Related Part Number

2SK1821  |  2SK3876-01R

2SK530  |  2SK260

2SK1477  |  2SK1346

DataSheet.es | 2020 | Contacto