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| 2SK2802 Description |
| Silicon N Channel MOS FET Low Frequency Power Switching
2SK2802
Silicon N Channel MOS FET Low Frequency Power Switching
ADE-208-537C (Z) 4th. Edition Jun 1998 Features
Low on-resistance R DS(on) = 0. 2 Ω typ. (VGS = 4 V, I D = 100 mA) 2.5V gate drive devices. Small package (MPAK)
Outline
MPAK
3 1
D
2
G
1. Source 2. Gate 3. Drain
S
2SK2802
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10
Hitachi Semiconductor |
| Related Part Number |
2SK867A | 2SK1222 2SK695 | 2SK818 2SK1024 | 2SK1693 |
| DataSheet.es | 2020 | Contacto |