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2SK2802 PDF File ( Datasheet )

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2SK2802
Small Signal Field-Effect Transistor, 0.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
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2SK2802 Description
Silicon N Channel MOS FET Low Frequency Power Switching

2SK2802 Silicon N Channel MOS FET Low Frequency Power Switching ADE-208-537C (Z) 4th. Edition Jun 1998 Features Low on-resistance R DS(on) = 0. 2 Ω typ. (VGS = 4 V, I D = 100 mA) 2.5V gate drive devices. Small package (MPAK) Outline MPAK 3 1 D 2 G 1. Source 2. Gate 3. Drain S 2SK2802 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10

Hitachi Semiconductor
Hitachi Semiconductor




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