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2SK2789 PDF File ( Datasheet )

VBsemi
2SK2789-VB
N, 100V, 18A, Rds(on), 100M¦¸@10V, 120M¦¸@4.5V, 20VGS(¡ÀV), 2~4VTH(V) , TO220F, -
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Axis Part Limited100.32890.32140.3108Visit Site
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2SK2789 Description
Silicon N Channel MOS Type Field Effect Transistor

2SK2789 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2 π MOSV) 2SK2789 Chopper Regulator, DC DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain source ON resistance : RDS (ON) = 66 mΩ (typ.) l High forward transfer admittance : |Yfs| = 16 S (typ.) l Low leakage current : IDSS = 100 A (max) (VDS = 100 V) l Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain source voltage Drain gate v

Toshiba Semiconductor
Toshiba Semiconductor




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