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| 2SK2789 Description |
| Silicon N Channel MOS Type Field Effect Transistor
2SK2789
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2 π MOSV)
2SK2789
Chopper Regulator, DC DC Converter and Motor Drive Applications
Unit: mm
l 4 V gate drive l Low drain source ON resistance : RDS (ON) = 66 mΩ (typ.) l High forward transfer admittance : |Yfs| = 16 S (typ.) l Low leakage current : IDSS = 100 A (max) (VDS = 100 V) l Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain source voltage
Drain gate v
Toshiba Semiconductor |
| Related Part Number |
2SK1821 | 2SK3876-01R 2SK530 | 2SK260 2SK1477 | 2SK1346 |
| DataSheet.es | 2020 | Contacto |