2SK223 PDF File ( Datasheet )

Ordering number:EN659K N-Channel Junction Silicon FET 2SK223 High Voltage Driver Applications Features · Ultrahigh withstand voltage (VGDS≥ 80V). · Due to low gate leakage currents even at high voltage, the 2SK223 is suitable for a wide range of application (IGDL=1nA, VDS=50V, ID=1mA). · High yfs ( yfs =20mS, VDS=30V, f=1kHz). Package Dimensions unit:mm 2019B [2SK223] 5.0 4.0 4.0 0.6 2.0 14.0 5.0 0.45 0.5 0.45 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Dr

2SK2231 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2 π MOSV) 2SK2231 Chopper Regulator, DC DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain source ON resistance : RDS (ON) = 0.12 Ω (typ.) l High forward transfer admittance : |Yfs| = 5.0 S (typ.) l Low leakage current : IDSS = 100 A (max) (VDS = 60 V) l Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain source voltage Drain gate