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2SK2112 PDF File ( Datasheet )

Renesas
2SK2112-T1-AZ
Power Field-Effect Transistor, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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2SK2112 Description
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2112 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2112 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators, such as motors and DC, DC converters. PACKAGE DIMENSIONS (in mm) 4.5 ± 0.1 1.6 ± 0.2 2.5 ± 0.1 4.0 ± 0.25 1.5 ± 0.1 0.8 MIN. S 0.42 ±

NEC
NEC




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