2SK1999 PDF File ( Datasheet )

www heet4 Data 2SK1999 Silicon N-Channel MOS FET Application VHF amplifier Features High gain, high efficiency PG = 15 dB, ηD = 65% typ (f = 200 MHz) Compact package Suitable for push - pull circuit Outline 2SK1999 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VDSS VGSS ID Pch* Tch Tstg 1 Ratings 120 ±20 12 180 150 55 to