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2SK1913 PDF File ( Datasheet )

Toshiba
2SK1913
Power Field-Effect Transistor, 4A I(D), 600V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...
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2SK1913 Description
N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1913 DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed APPLICATIONS ·High speed ,high current switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 4 A Ptot Total Dissipation@TC=25℃ 40 W Tj Max. Operating Juncti

Inchange Semiconductor
Inchange Semiconductor




Related Part Number

2SK1487  |  2SK1324  

2SK1378  |  2SK1483C  

2SK1351  |  2SK1320  



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