2SK1867 PDF File ( Datasheet )

Plehtatsp:e, M, vaiiwsniwttefw.nolsalenocmwiie, cnpolDgdiina.ssUncpceRoaodLnnnttiapidalinmsnbasuaouiocneneniuoetdtdcnd.ieltticnnaytnmocalp.eujaniuesepctn, ddtieeetentsnfyn, yfopaproelnelmdcoaetwitioynnpg.efourDisMcaionnttie Productnnu 18.0±0.5aendc Solder Dip lifecycle stage. Power F-MOS FETs 2SK1867 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 26ns q No secondary breakdown q Allowing