2SK1341 PDF File ( Datasheet )

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1341 DESCRIPTION ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 900 ±30 Drain Current-continuous@ TC=25℃ 6 Total Dissipation@TC=25℃ 100 Max.

2SK1341 Silicon N Channel MOS FET REJ03G0938-0200 (Previous: ADE-208-1278) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source S 3 1 2 Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1341 Absolute Maximum Ratings (Ta = 25°C) Item S Drain to