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2SK133 PDF File ( Datasheet )

Renesas
2SK1337TZ-E
Power Field-Effect Transistor, 0.3A I(D), 100V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...
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2SK133 Description
LOW FREQUENCY POWER AMPLIFIER

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

Hitachi Semiconductor
Hitachi Semiconductor
N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1330 DESCRIPTION ·Drain Current ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT DSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 8 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max. Operating Junction Tem

Inchange Semiconductor
Inchange Semiconductor




Related Part Number

2SK788  |  2SK1652  

2SK754  |  2SK557  

2SK1805  |  2SK1211  



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