|
2SK1204 PDF File ( Datasheet )
Renesas
2SK1204
Power Field-Effect Transistor, 8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Quest | 214 | 3.75 | Visit Site | ||
Powered by Octopart | |||||
| 2SK1204 Description |
| N-Channel MOSFET Transistor
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1204
DESCRIPTION ·Drain Current ID= 8A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 900V(Min) ·Fast Switching Speed
APPLICATIONS ·Designed for high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0) Gate-Source Voltage
900 ±20
V V
Drain Current-continuous@ TC=25℃ 8 A
Total Dissipation@TC=25℃
100
 Inchange Semiconductor |
Silicon N-Channel MOS FET
 Hitachi Semiconductor |
| Related Part Number |
2SK1937 | 2SK1352 2SK1321 | 2SK418 2SK1982 | 2SK934 |
| DataSheet.es | 2020 | Contacto |