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2SK1151L PDF File ( Datasheet )

VBsemi
2SK1151L-VB
N, 650V, 2A, Rds(on), 4300M¦¸@10V, 20VGS(¡ÀV), 2VTH(V) , TO251 , Led
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2SK1151L Description
Silicon N-Channel MOS FET

2SK1151(L)(S), 2SK1152(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SK1151(L)(S), 2SK1152(L)(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1151 2SK1152 Gate to source voltage Drain current Drain peak current Body to dr

Hitachi Semiconductor
Hitachi Semiconductor




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