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2SK1083 PDF File ( Datasheet )
Fuji Electric
2SK1083-MR
Power Field-Effect Transistor, 8A I(D), 60V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...
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|---|---|---|---|---|---|
| CoreStaff | 603 | 0.451 | Visit Site | ||
| Component Stockers USA | 321 | 99.99 | Visit Site | ||
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| 2SK1083 Description |
| N-channel MOS-FET
2SK1083-MR
F-III Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance
N-channel MOS-FET
60V
0,22Ω
8A
20W
> Outline Drawing
> Applications
- Motor Control - General Purpose Power Amplifier - DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Continous Reverse Drain Current Gate-Sourc
 Fuji Electric |
| N-channel MOS-FET
2SK1083-MR
F-III Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance
N-channel MOS-FET
60V
0,22Ω
8A
20W
> Outline Drawing
> Applications
- Motor Control - General Purpose Power Amplifier - DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Continous Reverse Drain Current Gate-Sourc
Fuji Electric |
| Related Part Number |
2SK3874-01R | 2SK1821 2SK528 | 2SK260 2SK1477 | 2SK1346 |
| DataSheet.es | 2020 | Contacto |