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2SK1014 PDF File ( Datasheet )

Fuji
2SK1014-01
Power Field-Effect Transistor, 12A I(D), 500V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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2SK1014 Description
N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) APPLICATIONS ·high voltage, high speed power switching isc Product Specification 2SK1014 ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 500 V Gate-Source Voltage ±30 V Drain Current-continuous@ TC=25℃ 12 A Total Dissipation@TC=25℃ 125 W Max. Operating Junction Temperatu
Inchange Semiconductor
Inchange Semiconductor
N-CHANNEL SILICON POWER MOSFET

Fuji Electric
Fuji Electric



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