2SJ629 PDF File ( Datasheet )

Ordering number : EN9084A 2SJ629 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ629 Features General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10 s, duty cycle≤