2SJ588 PDF File ( Datasheet )

2SJ588 Silicon P Channel MOS FET High Speed Switching ADE-208-802 (Z) 1st.Edition. June 1999 Features Low on-resistance R DS =2.8 Ω typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 Ω typ. (V GS = -4 V , I D = -50 mA) 4 V gate drive device. Outline SPAK D 3 12 3 2 G 1. Source 2. Drain 3. Gate S 1 2SJ588 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Chann