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2SJ574 PDF File ( Datasheet )
Renesas
2SJ574BPTL-E
Small Signal Field-Effect Transistor, 0.3A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Win Source | 8,510 | Visit Site | |||
| SHENGYU ELECTRONICS | 7,949 | 0.2496 | Visit Site | ||
| Run Hong Electronics | 2,368 | 0.0536 | Visit Site | ||
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| 2SJ574 Description |
| Silicon P Channel MOS FET High Speed Switching
2SJ574
Silicon P Channel MOS FET High Speed Switching
ADE-208-739B (Z) 3rd.Edition. June 1999 Features
Low on-resistance R DS = 1.1 Ω typ. (VGS = -10 V , I D = -150 mA) R DS = 2.2 Ω typ. (VGS = -4 V , I D = -150 mA) 4 V gate drive device. Small package (MPAK)
Outline
MPAK
3 1
D 3
2
2 G
1. Source 2. Gate 3. Drain
S 1
2SJ574
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current
 Hitachi Semiconductor |
| Related Part Number |
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| DataSheet.es | 2020 | Contacto |