2SJ530S PDF File ( Datasheet )

2SJ530(L),2SJ530(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-655B (Z) 3rd. Edition Jun 1998 Features Low on-resistance R DS(on) = 0.08 Ω typ. 4V gate drive devices. High speed switching. Outline DPAK 2 4 D 4 1 2 G 3 1 2 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ530(L),2SJ530(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings 60 ±20 15 60