2SJ495 PDF File ( Datasheet )

DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ495 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter) 10.0 ± 0.3 3.2 ± 0.2 4.5 ± 0.2 2.7 ± 0.2 FEATURES Super Low On-State Resistance 15.0 ± 0.3 3 ± 0.1 4 ± 0.2 RDS(on)2 = 56 mΩ MAX. (VGS = 4 V, ID = 15 A) Low Ciss Ciss = 4120 pF TYP. Built-in Gate Protection Diode ABSOLUTE MAXIM