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2SJ358C PDF File ( Datasheet )

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2SJ358C-T1-AZ
Power Field-Effect Transistor, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

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2SJ358C Description
P-CHANNEL MOSFET FOR SWITCHING

Preliminary Data Sheet 2SJ358C P-CHANNEL MOSFET FOR SWITCHING R07DS1262EJ0300 Rev.3.00 Aug 17, 2015 Description The 2SJ358C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.0 V power source. Features Directly driven by a 4.0 V power source. Low on-state resistance RDS(on)1 = 143 m MAX. (VGS = -10 V, ID = -2.0 A) RDS(on)2 = 179 m MAX. (VGS = -4.5 V, ID = -2.0 A) RDS(on)3 = 190 m MAX. (VGS = -4.0 V, ID = -2.0 A) Ordering I
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