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2SJ356 PDF File ( Datasheet )

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2SJ356(0)-T1-AZ
Power Field-Effect Transistor, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

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2SJ356 Description
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ356 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ356 is a P-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators and DC, DC converters. PACKAGE DIMENSIONS (in mm) 4.5 ±0.1 1.6 ±0.2 1.5 ±0.1 FEATURES Can be directly driven by 5-V IC Low ON resistance RD
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Related Part Number

2SJ321  |  2SJ177  

2SJ358C  |  2SJ374  

2SJ170  |  2SJ171  



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