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| 2SJ181L Description |
| Silicon P-Channel MOS FET
2SJ181(L), 2SJ181(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S
2
3
2 3
2SJ181(L), 2SJ181(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current
Hitachi Semiconductor |
| Related Part Number |
2SJ170 | 2SJ358C 2SJ374 | 2SJ171 2SJ28 | 2SJ126 |
| DataSheet.es | 2020 | Contacto |