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| 2SD780A Description |
| NPN EPITAXIAL SILICON TRANSISTOR
RoHS 2SD780, 2SD780A
SOT-23-3L
2SD780, 2SD780A DFEATURES Power dissipation
TRANSISTOR (NPN)
1. BASE 2. EMITTER 3. COLLECTOR
TPCM: 0.2 W (Tamb=25℃)
1. 02
.,LCollector current
0. 95¡ 0. 025
0. 35 2. 92¡ 0. 05
ICM: 0.3 Collector-base voltage
A
OV(BR)CBO:
V(BR)CBO:
60 V 2SD780 80 V 2SD780A
1. 9
COperating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
ICParameter
Symbol
Test conditions
MI
WEJ |
| AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
NEC |
| Related Part Number |
2SD1298 | 2SD602A-HF 2SD1896 | 2SD811 2SD2033 | 2SD2615 |
| DataSheet.es | 2020 | Contacto |