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| 2SD655 Description |
| Silicon NPN Epitaxial
2SD655
Silicon NPN Epitaxial
Application
Low frequency power amplifier, Muting
Outline
TO-92 (1)
1. Emitter 2. Collector 3. Base 3 2 1
2SD655
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings 30 15 5 0.7 1.0 500 150 55 to +150 Unit V V V A A mW °C °C
Electr
Hitachi Semiconductor |
| NPN Silicon Epitaxial Planar Transistor
ST 2SD655
NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, D, E and F, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25℃) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Peak Current Power Dissipation J
SEMTECH |
| Related Part Number |
2SD758 | 2SD2162 2SD317A | 2SD412 2SD1475 | 2SD1113 |
| DataSheet.es | 2020 | Contacto |