2SD1760 PDF File ( Datasheet )

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1760 DESCRIPTION ·Low VCE(sat) ·Small and slim package ·Complements the 2SB1184 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power dissipation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 3 A

Elektronische Bauelemente 2SD1760 3A , 60V NPN Epitaxial Planar Silicon Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low VCE(sat). VCE(sat) = 0.5V(Typ.) (IC, IB = 2A , 0.2A) Complements the 2SB1184 D-Pack (TO-252) CLASSIFICATION OF hFE Product-Rank 2SD1760-P 2SD1760-Q Range 82~180 120~270 2SD1760-R 180~390 PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13’ inch Collector Base Emitter A BC D GE K HF MJ